82113 tkim tc-00002980/71112 tkim/n1109pe tkim/90503 tsim ta-3722 no.7370-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 cph5617 n-channel power mosfet 30v, 150ma, 3.7 , dual cph5 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. ordering number : en7370c features ? low on-resistance ? ultrahigh-speed switching ? 1.5v drive ? composite type with 2 mosfets contained in the one package, improving the mounting ef ciency greatly speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 10 v drain current (dc) i d 150 ma drain current (pulse) i dp pw 10 s, duty cycle 1% 600 ma allowable power dissipation p d 0.25 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7017a-004 product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : drain1 2 : drain2 3 : gate2 4 : source 5 : gate1 cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 CPH5617-TL-E tl fz lot no. 543 12
cph5617 no.7370-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 10 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =80ma 0.15 0.22 s static drain to source on-state resistance r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss 5.9 pf reverse transfer capacitance crss 2.3 pf turn-on delay time t d (on) see speci ed test circuit. 19 ns rise time t r 65 ns turn-off delay time t d (off) 155 ns fall time t f 120 ns total gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate to source charge qgs 0.26 nc gate to drain ?miller? charge qgd 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v switching time test circuit ordering information device package shipping memo CPH5617-TL-E cph5 3,000pcs./reel pb free pw=10 s d.c. 1% 4v 0v v in p. g 50 g s i d =80ma r l =187.5 v dd =15v v out v in d cph5617
cph5617 no.7370-3/6 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78910 ta=25 c 0.01 0.1 23 57 23 5 10 7 5 3 2 1.0 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v ta= --25 c 25 c 75 c 25 c --25 c ta=75 c it00029 it00030 it00031 it00032 v gs =4v i d =40ma 80ma i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- static drain to source on-state resistance, r ds (on) -- drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a 0.01 0.1 23 57 23 5 10 1.0 7 5 3 2 v gs =2.5v 0.001 1.0 0.01 23 57 23 100 10 7 5 3 2 7 5 3 2 v gs =1.5v ta=75 c 25 c --25 c --25 c 25 c ta=75 c it00033 it00034 -- 6 0 0 -- 4 0 -- 2 0 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 0.01 0.01 0.1 23 57 23 5 0.1 7 5 3 2 7 5 3 2 1.0 v ds =10v 75 c 25 c ta= --25 c it00035 it00036 y fs -- i d drain current, i d -- a forward transfer admittance, y fs -- s r ds (on) -- ta static drain to source on-state resistance, r ds (on) -- ambient temperature, ta -- c r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a v gs =2.5v, i d =40ma v gs =4.0v, i d =80ma
cph5617 no.7370-4/6 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 5 3 2 7 5 3 2 v gs =0v --25 c 25 c ta=75 c it00037 i s -- v sd diode forward voltage, v sd -- v source current, i s -- a 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 v dd =15v v gs =4v t d (on) t r t f t d (off) it00038 drain current, i d -- a sw time -- i d switching time, sw time -- ns 0 2 4 6 8 10 12 14 16 18 20 1.0 10 7 5 3 2 7 5 3 2 100 ciss coss crss f=1mhz it00039 ciss, coss, crss -- v ds drain to source voltage, v ds -- v ciss, coss, crss -- pf 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =150ma it00040 v gs -- qg total gate charge, qg -- nc gate to source voltage, v gs -- v 0 20 40 60 100 120 140 0 80 0.20 0.25 0.30 0.10 0.05 0.15 160 amibient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it01962
cph5617 no.7370-5/6 outline drawing land pattern example CPH5617-TL-E mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
cph5617 ps no.7370-6/6 note on usage : since the cph5617 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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